| PART |
Description |
Maker |
| THC63LVDM83D |
REDUCED SWING LVDS 24Bit COLOR HOST-LCD PANEL INTERFACE
|
THine Electronics, Inc.
|
| AK7744VT |
24bit 3ch ADC 24bit 4ch DAC with Audio DSP
|
Asahi Kasei Microsystems
|
| GS815118 |
16MbM x 18Bit) Sync Burst SRAM(16M位（1M x 18同步静态RAM（带2位脉冲地址计数器）)
16Mb1M x 18Bit) Sync Burst SRAM(16M位（1M x 18同步静态RAM（带2位脉冲地址计数器）) 16Mb的（100万x 18位）同步突发静态存储器1,600位（100万18位）同步静态随机存储器（带2位脉冲地址计数器）
|
GSI Technology, Inc.
|
| SI6821DQ |
P-Ch, Reduced Qg, Fast Switching MOSFET Schottky Diode
From old datasheet system
P-Channel Reduced Qg / MOSFET with Schottky Diode
P-Channel, Reduced Qg, MOSFET with Schottky Diode P沟道，减Qg和与MOSFET的肖特基二极
|
Vishay Siliconix
Vishay Intertechnology, Inc.
|
| AK4317 AK4317-VF |
18BIT SCF DAC WITH ATT & MIXER
|
http://
Asahi Kasei Microsystems Co.,Ltd
|
| K4R761869A-GCT9 K4R761869A-F K4R761869A-FBCCN1 K4R |
576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| GS88018 |
8Mb12K x 18Bit) Synchronous Burst SRAM(8M位（512K x 18位）同步静态RAM（带2位脉冲地址计数器）)
|
GSI Technology
|
| SI4850EY SI4850EY-E3 SI4850EY-T1 SI4850EY-T1-E3 |
N-Channel Reduced Qg, Fast-Switching MOSFET N沟道Qg，快速开关MOSFET
N-Channel Reduced Qg, Fast Switching MOSFET N沟道减少Qg和，快速开关MOSFET
N-Channel Reduced Qg/ Fast Switching MOSFET
|
Vishay Intertechnology, Inc.
Vishay Siliconix
|
| MAX9174ETB MAX9175ETB MAX9175EUB MAX9174EUB |
670MHz LVDS-to-LVDS and Anything-to-LVDS 1:2 Splitters
|
Maxim Integrated Products, Inc.
|
| CHL-A7-222.5792TS CHLZ-A7-222.5792TS CHLZ-222.5792 |
CRYSTAL OSCILLATOR, CLOCK, 800 MHz, LVDS OUTPUT
LVDS Oscillator LVDS Output
|
ETC
CARDINAL COMPONENTS INC
http://
List of Unclassifed Manufacturers
|
| GS8180S18 |
1Mb x 18Bit Separate I/O Sigma DDR SRAM(1M x 18位独立I/O接口双数据速率读和写模式静态ΣRAM) 1x 18位独立的I / O西格玛的DDR SRAM的（100万18位独立的I / O接口双数据速率读和写模式静态ΣRAM
|
GSI Technology, Inc.
|
